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| SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE "SuperBAT" ISSUE 2 - October 1997 7 1 ZHCS750 C 1 FEATURES: * Low V F * High Current Capability APPLICATIONS: * DC - DC converters * Mobile telecomms * PCMCIA PARTMARK DETAIL: ZS7 2 A 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward Current (Continuous) Forward Voltage @ IF = 750mA Average Peak Forward Current; D.C. = 50% Non Repetitive Forward Current t100s t10ms Power Dissipation at Tamb= 25 C Storage Temperature Range Junction Temperature SYMBOL VR IF VF IFAV IFSM Ptot Tstg Tj VALUE 40 750 490 1500 12 5.2 500 -55 to + 150 125 UNIT V mA mV mA A A mW C C ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). PARAMETER Reverse Breakdown Voltage Forward Voltage SYMBOL V (BR)R VF MIN. 40 TYP. 60 225 235 290 340 390 440 530 50 25 12 280 310 350 420 490 540 650 100 MAX. UNIT V mV mV mV mV mV mV mV A pF ns CONDITIONS. IR= 300A IF= IF= IF= IF= IF= IF= IF= 50mA* 100mA* 250mA* 500mA* 750mA* 1000mA* 1500mA* Reverse Current Diode Capacitance Reverse Recovery Time IR CD trr V R= 30V f= 1MHz,V R= 25V switched from IF = 500mA to IR = 500mA Measured at IR = 50mA *Measured under pulsed conditions. Pulse width= 300s; duty cycle 2% . ZHCS750 TYPICAL CHARACTERISTICS 10 100m IF - Forward Current (A) IR - Reverse Current (A) Typical 10m +125C 1 1m 100 +100C +50C 10 1 100n +25C 0.1 +125C +25C -55C -55C 0.01 0 0.2 0.4 0.6 0.8 10n 0 10 20 30 VF - Forward Voltage (V) VR - Reverse Voltage (V) IF v VF IR v VR IF(av) Average Forward Current (A) Typical t1 D=t1/t PF(av) Average Power Dissipation (mW) 1.2 p 0.5 Typical Tj=125C I F(pk) DC 0.4 0.3 t1 D=t1/t p I F(pk) tp I F(av)=D x I F(pk) 0.8 D=0.5 tp I F(av)=D x I F(pk) D=0.2 0.2 0.1 0 0 0.4 DC D=0.5 D=0.2 D=0.1 D=0.05 0.4 D=0.1 D=0.05 0 75 85 95 105 115 125 PF(av)=I F(av) x VF 0.8 1.2 TC - Case Temperature (C) IF(av) Average Forward Current (A) IF(av) v TC PF(av) v IF(av) 125 Typical 200 100 Rth=100 C/W Rth=200C/W Rth=300 C/W CD - Diode Capacitance (pF) Ta - Ambient Temp ( C) 100 75 1 10 100 0 0 10 20 30 VR - Reverse Voltage (V) VR - Reverse Voltage (V) Ta v VR CD v VR ZHCS750 TYPICAL CHARACTERISTICS MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate. |
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